Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition
Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition
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DOI：
10.1016/j.optcom.2004.03.064
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发表时间：
2004-07
影响因子：
2.4
通讯作者：
C. Liu;B. Zhang;N. Binh;Y. Segawa
中科院分区：
文献类型：
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作者：
C. Liu;B. Zhang;N. Binh;Y. Segawa
采用金属有机化学气相沉积（MOCVD）技术制备了ZnO薄膜，并进行了二次谐波产生（SHG）研究。通过比较不同沉积温度下制备的一系列ZnO薄膜中产生的二次谐波信号，我们得出结论：在适当的沉积温度下制备的ZnO薄膜中产生的二次谐波信号占很大一部分。在250 °C下沉积的薄膜的二阶极化率张量χ（2）zzz=9.2 pm/V。
Second harmonic generation (SHG) from ZnO thin films fabricated by metalorganic chemical vapor deposition (MOCVD) technique was carried out. By comparing the second harmonic signal generated in a series of ZnO films with different deposition temperatures, we conclude that a significant part of second harmonic signal is generated at the film deposited with appropriate temperature. The second-order susceptibility tensor χ(2)zzz=9.2 pm/V was deduced for a film deposited at 250 °C.