An ultra-high pressure sensor based on SOI piezoresistive material
An ultra-high pressure sensor based on SOI piezoresistive material
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DOI：
10.1007/s12206-010-0515-0
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发表时间：
2010-08-01
影响因子：
1.6
通讯作者：
Zhao, Libo
中科院分区：
文献类型：
--
作者：
Zhao, Yulong;Fang, Xudong;Zhao, Libo
本文介绍了一种国防工业和石油工业急需且广泛应用的超高压传感器。它采用基于微机电系统（MEMS）技术的微型绝缘体上硅（SOI）固体压阻芯片与圆柱形弹性体相结合而设计，能够成功地将爆炸中的动态超高压测量转换为应变测量。通过实验数据研究了传感器的性能，包括尺寸、灵敏度和线性度。实践证明本文研制的2GPa量级动态超高传感器在爆炸压力测量方面取得了成功。本文对超高压压力传感器的研究不仅可以为爆炸性能的提高提供参考，而且为下一步10GPa范围内压力传感器的研究奠定基础。
This paper describes an ultra-high pressure sensor which is in urgent need and widely used in defense industry and petroleum industry. It is designed on the combination of micro Silicon on Insulator (SOI) solid piezoresistive chip based on Micro Electro Mechanical Systems (MEMS) technique and cylindrical elastic body that could successfully convert dynamic ultra-high pressure measurement in explosion to strain measurement. Performances of the sensor including size, sensitivity, and linearity are investigated with experiment data. It's proved that the dynamic ultra-high sensor in the range of 2GPa in this paper is successful in pressure measurement in explosion. The research of ultra-high pressure sensor in this paper could not only provide a reference for the improvement of explosive property, but also lay a foundation for research of pressure sensor in the range of 10GPa of the next step.