Photoelectrochemical characterization of CIGS thin films for hydrogen production
Photoelectrochemical characterization of CIGS thin films for hydrogen production
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DOI：
10.1016/j.solmat.2004.10.011
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发表时间：
2005-07
影响因子：
6.9
通讯作者：
R. C. Valderrama;P. Sebastian;J. Enrı́quez;S. Gamboa
中科院分区：
文献类型：
--
作者：
R. C. Valderrama;P. Sebastian;J. Enrı́quez;S. Gamboa
研究了Cu（In，Ga）Se_2（CIGS）薄膜在0.5M H_2SO_4中的光电化学性质。通过CuInSe 2（CIS）的电沉积获得CIGS薄膜，并且通过物理气相沉积（PVD）调整组成以获得CuIn 1-xGaxSe 2。利用CIGS薄膜制备了光电极。这些电极表现出阴极光响应与氢析出发生在0.3V更积极的电位比观察到的电位在黑暗中的氢析出。CIGS薄膜在不同电位下产生的氢气通过库仑测量进行估计，表明在光照下产生的氢气量比在黑暗中产生的氢气高两个数量级。
A photoelectrochemical study of Cu(In,Ga)Se2(CIGS) thin films in 0.5M H2SO4is presented in this work. CIGS thin films were obtained by electrodeposition of CuInSe2(CIS) and the composition was adjusted by physical vapor deposition (PVD) to obtain CuIn1−xGaxSe2. Photo-electrodes were prepared using CIGS thin films. These electrodes exhibited cathodic photoresponse associated with the hydrogen evolution occurring at 0.3V more positive potential than the potential observed for the hydrogen evolution in the dark. The production of hydrogen by CIGS films at different potentials was estimated by coulometric measurements, showing that under illumination the quantity of hydrogen produced was two orders of magnitude higher than the hydrogen produced in the dark.