D-band Dicke-radiometer in 90 nm SiGe BiCMOS technology
D-band Dicke-radiometer in 90 nm SiGe BiCMOS technology
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DOI：
10.1109/mwsym.2017.8059046
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发表时间：
2017-06
期刊：
影响因子：
--
通讯作者：
R. Ben Yishay;D. Elad
中科院分区：
文献类型：
--
作者：
R. Ben Yishay;D. Elad
This paper presents the design and characterization results of a calibrated passive radiometer (Dicke-radiometer) operating in the D-band frequency range and realized in an advanced 90 nm SiGe BiCMOS technology. A single-pole double-throw (SPDT) switch is presented, utilizing PIN diodes, with a measured insertion loss of 2 dB and an isolation of 20 dB at 140 GHz. The LNA provides a gain of 30 dB with 3 dB bandwidth of 28 GHz and minimum noise figure of 6.2 dB. The square-law power detector achieves responsivity of 14.5 kV/W and noise equivalent power (NEP) <1.5 pW/VHz. The complete receiver attain peak responsivity of 8.6 MV/W and temperature resolution of 0.22 K (30 mS integration time) with 40 mW power consumption.
