Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
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DOI：
10.1063/1.2338543
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发表时间：
2006-08-21
影响因子：
4
通讯作者：
Nukui, Takeaki
中科院分区：
文献类型：
--
作者：
Kawanishi, Hideo;Senuma, Masanori;Nukui, Takeaki
研究了生长在SiC衬底上的c面AlxGa 1-xN多量子威尔斯和m面AlxGa 1-xN单层的各向异性光学性质。从x=0.66-0.76（发射波长为228-240 nm）的c-平面样品检测到非常弱的表面发射，尽管从x=0-0.41（280-365 nm）的c-平面样品和x=0-0.76（240-365 nm）的m-平面样品检测到强的表面发射。这些结果表明，晶场分裂空穴价带在AlxGa_（1-xN）（x ≥ 0.5）的（E平行于c）极化和各向同性发射中起着重要作用。
We studied the anisotropic optical properties of c-plane AlxGa1-xN multiple quantum wells and m-plane AlxGa1-xN single layer grown on a SiC substrate. Very weak surface emission was detected from c-plane samples with x=0.66-0.76 (emission wavelength of 228-240 nm), although strong surface emission was detected from c-plane samples with x=0-0.41 (280-365 nm) and m-plane samples with x=0-0.76 (240-365 nm). These results indicate that crystal-field splitoff hole valence band plays an important role in (E parallel to c) polarization and isotropic emissions from AlxGa1-xN with x >= 0.5.