Crystalline silicon on glass by steady-state solution growth using indium as solvent

Crystalline silicon on glass by steady-state solution growth using indium as solvent
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DOI:
10.1007/s00339-015-9141-0
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发表时间:
2015-04
期刊:
Applied Physics A
影响因子:
--
通讯作者:
R. Bansen;R. Heimburger;J. Schmidtbauer;T. Teubner;T. Markurt;C. Ehlers;T. Boeck
R. Bansen;R. Heimburger;J. Schmidtbauer;T. Teubner;T. Markurt;C. Ehlers;T. Boeck
中科院分区:
其他
文献类型:
--
作者:
R. Bansen;R. Heimburger;J. Schmidtbauer;T. Teubner;T. Markurt;C. Ehlers;T. Boeck

文献摘要

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为了在低温下在玻璃上生长晶体硅以用于光伏应用,开发了一种两步工艺。第一步,非晶硅薄膜通过金属诱导结晶在 300°C 左右的温度下结晶,其中液态铟充当硅的溶剂。由于非晶态和晶态之间的化学势差异,液态金属液滴在原来的非晶硅薄膜上进行面内运动,同时伴随着晶态硅沿着液滴的轨迹沉淀,这个过程我们称为非晶-液体-结晶(ALC)转变。在第二步中,ALC 籽晶层充当通过稳态溶液生长来生长晶体硅的模板。与常见的液相外延相反,种子层前面的过饱和是通过硅源和衬底之间的固定温差建立的。通过这种技术可以生长出 20–50 µm 范围内杂质浓度较低的硅微晶。稳态溶液生长的基本特征与大规模工业玻璃生产中的浮法玻璃工艺兼容,这为在连续生产线上连续生产太阳能电池用玻璃和硅薄膜带来了希望。
In order to grow crystalline silicon on glass at low temperatures for photovoltaic applications, a two-step process has been developed. In the first step, amorphous Si films are crystallized at temperatures around 300 °C by metal-induced crystallization, whereby liquid indium serves as a solvent for silicon. Due to the difference of chemical potentials between the amorphous and the crystalline state, an in-plane movement of the liquid metal droplets on the formerly amorphous Si film is accompanied by precipitation of crystalline Si along the droplets’ traces, a process we call amorphous–liquid–crystalline (ALC) transition. In the second step, the ALC seed layers serve as templates for the growth of crystalline silicon by steady-state solution growth. In contrast to common liquid-phase epitaxy, the supersaturation in front of the seed layer is established by a stationary temperature difference between a silicon source and the substrate. Si crystallites in the range of 20–50 µm with low impurity concentrations are grown by this technique. Essential features of steady-state solution growth are compatible with the float glass process in large-scale industrial glass production, which raises hopes for a successive production of glass and thin Si films for solar cells in a continuous production line.