Low-current spin-transfer switching and its thermal durability in a low-saturation-magnetization nanomagnet
Low-current spin-transfer switching and its thermal durability in a low-saturation-magnetization nanomagnet
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DOI：
10.1063/1.1829140
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发表时间：
2004-12
影响因子：
4
通讯作者：
K. Yagami;A. Tulapurkar;A. Fukushima;Yoshishige Suzuki
中科院分区：
文献类型：
--
作者：
K. Yagami;A. Tulapurkar;A. Fukushima;Yoshishige Suzuki
自旋转移磁化切换技术是一种很有前途的候选人作为一个高密度的磁性随机存取存储器的写入机制，因为它的可扩展性。然而，所需的切换电流Ic对于将该技术应用于使用隧穿磁阻器件的MRAM来说仍然太大。在这里，它表明，降低饱和磁化强度Ms的磁单元是一种有效的方式来降低Ic。使用μ0Ms为0.75T的CoFeB膜作为磁单元使用连续电流测量的Ic降低一个数量级。我们将写入电流脉冲的持续时间从1μs改变为5s，以研究开关过程中的热效应，并预测具有低Ic的CoFeB磁体单元可以与MRAM应用所需的热耐久性兼容。
A spin-transfer magnetization switching technique is a promising candidate as a writing mechanism for a high-density magnetic random access memory because of its scalability. The required switching current Ic, however, is still too large for this technique to be applied to MRAM using tunneling magnetoresistive devices. Here, it is demonstrated that reducing the saturation magnetization Ms of magnet cells is an effective way to decrease Ic. Use of a CoFeB film with μ0Ms of 0.75T as a magnet cell reduced Ic measured with a continuous current by an order of magnitude. We changed the duration of a writing current pulse from 1μs to 5s to investigate thermal effects on the switching process, and predicted that CoFeB magnet cells with low Ic can be compatible with the thermal durability required for MRAM applications.