An Online Failure Assessment Approach for SiC-based MOSFET Power Modules Using Iterative Condition Monitoring Technique
An Online Failure Assessment Approach for SiC-based MOSFET Power Modules Using Iterative Condition Monitoring Technique
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DOI：
10.1109/compel49091.2020.9265830
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发表时间：
2020-11
期刊：
影响因子：
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通讯作者：
J. Naghibi;K. Mehran;M. Foster
中科院分区：
文献类型：
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作者：
J. Naghibi;K. Mehran;M. Foster
基于宽带隙的功率模块中故障的表征与监测，是实现稳健且可靠的高密度电力电子设计的先决条件。由于宽带隙功率模块与硅基功率模块存在根本差异，应用现有的状态监测方法（这些方法大多是为硅基器件设计的），不一定能在这些电路中达到预期的精度。利用专门针对宽带隙器件的状态监测技术，可以实现全面且准确的可靠性评估。本文考虑对作为主要故障指标的开关结温进行实时观测，这使得对开关故障率的估算更为精确。
本文采用一种具有监测器件状态能力并能在特定时间间隔更新评估的迭代故障率评估方法，满足了基于宽带隙器件所需的状态监测标准。开发了一个由PLECS、COMSOL和MATLAB组成的耦合仿真平台，以在迭代实时过程中获取开关运行参数。运用拜耶尔寿命模型，根据实时开关参数估算开关故障率。以一个1200V/50A的碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）功率模块为例，对所开发的实时迭代状态监测技术进行了测试。在实验装置中，使用DSPACE作为高带宽信号接口。结果表明，通过采用所提出的状态监测技术，能够基于实时过程获取开关故障率，从而在开关运行期间实现更精确的可靠性评估。
Characterization and monitoring of the faults in Wide Bandgap-based power modules are the prerequisites to achieve robust and reliable high density power electronic design. Due to the basic differences between wide bandgap and Silicon - based power modules, applying the existing condition monitoring approaches - which are mostly designed for Silicon-based devices - does not necessarily provide the expected accuracy in these circuits. Comprehensive and accurate reliability assessment can be addressed using condition monitoring techniques, specialized for wide bandgap-based devices. Real-time observation of the switch junction temperature, as the main failure indicator, is considered in this paper, and it has led to a more accurate estimation of the switch failure rate. In this paper, employing an iterative failure rate assessment with the capability to monitor the device condition and renew the assessment in specific time intervals has addressed the required condition monitoring criteria in wide bandgap-based devices. A coupled simulation platform, consisting of PLECS, COMSOL, and MATLAB is developed to obtain the switch operational parameters during an iterative realtime process. Bayerer lifetime model is employed to estimate the switch failure rate based on the real-time switch parameters. The developed real-time iterative condition monitoring technique is tested for a 1200V/50A SiC MOSFET power module as the case study. DSPACE is employed in the experimental setup as a high bandwidth signal interface, and it was shown that by employing the proposed condition monitoring technique, the switch failure rate can be acquired based on a real-time process in order to achieve more accurate reliability assessment during the switch operation.