An analysis on the ambipolar current in Si double-gate tunnel FETs
An analysis on the ambipolar current in Si double-gate tunnel FETs
复制标题
DOI：
10.1016/j.sse.2011.11.009
复制
发表时间：
2012-04-01
影响因子：
1.7
通讯作者：
Anghel, Costin
中科院分区：
文献类型：
--
作者：
Hraziia;Vladimirescu, Andrei;Anghel, Costin
研究了设计参数对隧道场效应晶体管(TFET)双极电流的影响。使用数值设备模拟。通过在栅极和漏极下面重叠、使用低k间隔件以及将触点放置在顶部和底部配置中，I-AMB逐渐减小。解释说，顶部和底部接触的结构导致漏极隔离层内部的场分布，从而限制了通过该器件的双极电流。通过将上下触点布局与低k间隔层相结合，得到了一种完全与栅压无关的超低双极电流的TFET结构。硅(Si)TFET的定标受到漏极间隔层长度的限制，在不将I-AMB增加到不希望的高值的情况下，漏极间隔体的定标不能超过最小限制。(C)2012爱思唯尔有限公司。保留所有权利。
This work presents a study on the influence of the design parameters on the ambipolar current (I-AMB) of the Tunnel Field Effect Transistors (TFETs). Using numerical device simulations. I-AMB is reduced progressively by underlapping the gate and the drain, by using low-k spacers and by placing the contacts in the top and bottom configuration. It is explained that a structure with top and bottom contacts leads to the field distribution inside the drain spacer, limiting the ambipolar current through the device. A TFET structure with ultra-low ambipolar current, totally independent of the gate voltage, is obtained by combining the layout of top and bottom contacts with low-k spacers. The scaling of the Silicon (Si) TFET is limited by the length of the drain spacer that cannot be scaled beyond a minimal limit without increasing I-AMB to undesired high values. (C) 2012 Elsevier Ltd. All rights reserved.