High breakdown voltage p–n diodes on GaN on sapphire by MOCVD
High breakdown voltage p–n diodes on GaN on sapphire by MOCVD
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通过 MOCVD 在蓝宝石上的 GaN 上制作高击穿电压 p-n 二极管
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
U. Mishra
中科院分区：
文献类型：
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作者：
C. Gupta;Yuuki Enatsu;G. Gupta;S. Keller;U. Mishra
为了在GaN垂直功率器件中实现高击穿电压，需要低螺纹位错密度和低本底载流子浓度。这项工作表明，随着在蓝宝石上生长的非故意掺杂GaN （UID）厚度的增加，背景载流子浓度和螺纹位错密度（TDD）会降低。在该外皮上生长和制备的p-n二极管，使用4.8 μ m UID GaN，击穿电压为730 V，击穿场为1.75 MV cm - 1，导通电阻为5.1 m Ω cm2。由此得到的VBR2/RON的性能值（FOM）约为105 MW cm−2。这是蓝宝石或硅上氮化镓上p-n二极管的最高FOM值。因此，降低载流子浓度和位错密度对于实现蓝宝石上氮化镓的高击穿电压至关重要。
In order to achieve high breakdown voltage in GaN vertical power devices, low threading dislocation density and low background carrier concentration is required. This work demonstrates a decrease in the background carrier concentration and threading dislocation density (TDD) with an increase in the thickness of un‐intentionally doped (UID) GaN grown on sapphire. p–n diodes grown and fabricated on this epi, using 4.8 µm UID GaN, showed a breakdown voltage of 730 V, breakdown field of 1.75 MV cm−1 and an on‐resistance of 5.1 m Ω cm2. The figure of merit (FOM), VBR2/RON, thus obtained is approximately 105 MW cm−2. This is the highest reported FOM value for p–n diodes on GaN on sapphire or Si. Lowering the carrier concentration and dislocation density is thus shown to be critical for achieving high breakdown voltages on GaN on sapphire.