Ordering of GaAs quantum dots by droplet epitaxy
Ordering of GaAs quantum dots by droplet epitaxy
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DOI：
10.1002/pssb.200880591
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发表时间：
2009-04
期刊：
影响因子：
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通讯作者：
T. Mano;T. Kuroda;Takeshi Noda;K. Sakoda
中科院分区：
文献类型：
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作者：
T. Mano;T. Kuroda;Takeshi Noda;K. Sakoda
在晶格匹配的GaAs/AlGaAs系统中，通过液滴外延在GaAs（110）上实现了GaAs量子点的台阶边缘诱导有序化。在生长AlGaAs势垒层之后，自然形成沿着113 nm、112 nm、1111 nm和1221 nm方向的台阶边缘。在这些台阶边缘上，发生Ga液滴的优先成核，导致形成一维有序的Ga液滴。通过强As_4通量的辐照，我们可以得到有序的GaAs量子点。有的阵列长度超过1 μm，阵列中的量子点排列紧密。在对量子点进行快速热退火后，有序的量子点阵列表现出很强的光致发光。（© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Step‐edge‐induced ordering of GaAs QDs was achieved on GaAs(110) by droplet epitaxy in a lattice‐matched GaAs/AlGaAs system. After the growth of an AlGaAs barrier layer, step‐edges along the 〈113〉, 〈112〉, 〈111〉, and 〈221〉 directions were naturally formed. On these step‐edges, preferential nucleation of Ga droplets occurred, resulting in the formation of one‐dimensionally ordered Ga droplets. By irradiating intense As4 flux, we could form ordered GaAs QDs. Some of the arrays were longer than 1 μm and the QDs in the arrays were closely packed. After capping of the QDs followed by rapid thermal annealing, the ordered QD arrays exhibited strong photoluminescence emission. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)