A Study of Array Resistance Distribution and a Novel Operation Algorithm for WO x ReRAM Memory
A Study of Array Resistance Distribution and a Novel Operation Algorithm for WO x ReRAM Memory
复制标题
WO x ReRAM 存储器阵列电阻分布及新颖运算算法的研究
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
C. Y. Lu
中科院分区：
文献类型：
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作者：
K. Hsu;F. Lee;Y. Y. Lin;E. Lai;J. Y. Wu;D. Y. Lee;M. Lee;H. Lung;K. Hsieh;C. Y. Lu
摘要研究了氧化钨电阻式随机存储器（ReRAM）的电阻分布。逐位跟踪和位图比较显示了在每次编程操作之后预测单个单元电阻的困难。然而，群体行为遵循高斯分布，并且是可预测的。在此基础上，提出了一种恒定脉冲条件下的程序校验操作算法。这种新颖的新方法不仅有效地打开了存储器窗口，而且还防止了传统方法中降低单元可靠性的过应力。
Abstract Resistance distribution of tungsten oxide (WOx) resistive random access memory (ReRAM) is investigated. Bit-by-bit tracking and bit map comparison show the difficulties in predicting individual cell resistance after each programming operation. Nevertheless, the group behavior follows the Gaussian distribution and is predictable. Based on this finding, a program-verify operation algorithm with constant pulse condition is proposed. This novel new approach not only effectively opens up the memory window but also prevents overstressing in the conventional approach that degrades cell reliability.