Tri‐isopropyl gallium: A very promising precursor for chemical beam epitaxy
Tri‐isopropyl gallium: A very promising precursor for chemical beam epitaxy
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三异丙基镓：非常有前途的化学束外延前驱体
DOI：
10.1063/1.107939
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发表时间：
1992
影响因子：
4
通讯作者：
S. Rushworth
中科院分区：
文献类型：
--
作者：
P. Lane;T. Martin;R. Freer;P. Calcott;C. Whitehouse;A. C. Jones;S. Rushworth
描述了首次报道的三异丙基镓 (TiPGa) 在化学束外延 (CBE) 中的应用。对所得未掺杂 GaAs 外延层进行的霍尔测量表明，与使用标准 CBE 前体三乙基镓在相当条件下生长的结构相比，无意的碳杂质水平降低了一个数量级。 2 K 光致发光光谱与其他地方通过分子束外延生长的最先进的高纯度 GaAs 材料记录的光谱相匹配，并且对有意 n 型掺杂的 GaAs 层进行 77 K 霍尔测量，证实了低 1014 cm−3 范围内的残余受主能级。获得的早期数据已经清楚地表明 TiPGa 作为含 Ga III-V 族材料 CBE 生长的改进前体的重要潜力。
The first reported use of tri‐isopropyl gallium (TiPGa) in chemical beam epitaxy (CBE) is described. Hall measurements performed on the resulting undoped GaAs epitaxial layers indicate an order of magnitude reduction in unintentional carbon impurity levels compared to structures grown under comparable conditions using the standard CBE precursor, triethyl gallium. 2 K photoluminescence spectra match those recorded elsewhere from state‐of‐the‐art high purity GaAs material grown by molecular beam epitaxy, and 77 K Hall measurements on intentionally n‐type doped GaAs layers confirm residual acceptor levels in the low 1014 cm−3 range. The early data obtained already provide a clear indication of the important potential of TiPGa as an improved precursor for the CBE growth of Ga‐containing III–V materials.