Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy
Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy
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气源分子束外延生长GaNP/GaP多量子阱的光致发光特性
DOI：
10.1063/1.1313813
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
C. Tu
中科院分区：
文献类型：
--
作者：
H. Xin;C. Tu
采用气态源分子束外延技术，在(10 0)GaP衬底上生长了不同N浓度和不同厚度的GaN_xP_1/−_x/GaP多量子阱。通过高分辨率X射线摇摆曲线测量和理论动力学模拟确定了N浓度和GaNp势垒厚度。光致发光(PL)测量表明，GaNp的光致发光波长随氮浓度的增加而红移，带边发射积分强度随氮浓度的增加而增大，最高可达2.5%。利用无限大势垒模型和不同的GaN0.025P0.975/GaP多量子阱厚度，得到了GaN0.025P0.975合金的大导带有效质量MC*∼0.9Me，表明导带内存在Γ波函数和X波函数的混合。
GaNxP1−x/GaP multiple quantum wells (MQWs) with various N concentrations and well thicknesses were grown on (100) GaP substrates by gas source molecular beam epitaxy with a radio frequency nitrogen radical beam source. The N concentration and GaNP well thickness were determined by high-resolution x-ray rocking curve measurements and theoretical dynamical simulations. Photoluminescence (PL) measurements show that the PL wavelength of GaNP redshifts and the band edge emission integrated intensity increases with increasing N concentration, up to 2.5%. By using an infinite barrier model and various well thicknesses of GaN0.025P0.975/GaP MQWs, a large conduction-band effective mass mc*∼0.9 me is obtained for the GaN0.025P0.975 alloy, indicating a mixing of Γ and X wave functions in the conduction band.