High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD
High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD
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MOCVD法制备高效双结GaInP/GaAs叠层太阳能电池
DOI：
10.1134/s106378260706022x
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发表时间：
2007
期刊：
影响因子：
0.7
通讯作者：
V. Andreev
中科院分区：
文献类型：
--
作者：
V. Lantratov;N. A. Kalyuzhnyĭ;S. Mintairov;N. Timoshina;M. Shvarts;V. Andreev
研究了用MOCVD方法生长的单片双结GaInP/GaAs太阳电池。优化了与GaAs晶格匹配的三元GaxIn 1 −xP和AlxIn 1 −xP合金的生长条件。研制了一种基于重掺杂n ~（++）-GaAs：Si和p ~（++）-AlGaAs：C层的高峰电流密度为207 A/cm ~ 2的隧穿二极管。级联GaInP/GaAs太阳能电池作为相关研究的结果，具有良好的太阳能转换效率，用于空间和地面应用。GaInP/GaAs太阳电池的最大效率为30.03%（AM1.5D，40 suns）。
Monolithic dual-junction GaInP/GaAs solar cells grown by the MOCVD method were studied. The conditions of the growth of ternary GaxIn1−xP and AlxIn1−xP alloys lattice-matched to GaAs are optimized. Technology for fabrication of a tunneling diode with a high peak current density of 207 A/cm2 on the basis of heavily doped n++-GaAs:Si and p++-AlGaAs:C layers is developed. Cascade GaInP/GaAs solar cells obtained as a result of relevant studies featuring a good efficiency of the solar-energy conversion both for space and terrestrial applications. The maximum value of the GaInP/GaAs solar-cell efficiency was 30.03% (at AM1.5D, 40 suns).