A biased anode to suppress ion back-bombardment in a DC high voltage photoelectron gun
A biased anode to suppress ion back-bombardment in a DC high voltage photoelectron gun
复制标题
直流高压光电子枪中抑制离子反向轰击的偏置阳极
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
K. Surles
中科院分区：
文献类型：
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作者：
J. Grames;P. Adderley;J. Brittian;J. Clark;J. Hansknecht;D. Machie;M. Poelker;E. Pozdeyev;M. Stutzman;K. Surles
离子反轰击是限制直流高压GaAs光电子枪工作寿命的主要机制。在这项工作中，一个电隔离的阳极电极被用来区分的QE损害贡献的离子内产生的阴极/阳极间隙和下游的阳极。这种新的阳极设计提供了一种抑制由于束线中的电离气体而导致的QE衰减的手段。
Ion back‐bombardment is the dominant mechanism that limits the operating lifetime of DC high voltage GaAs photoelectron guns. In this work, an electrically isolated anode electrode was used to distinguish the QE damage contributions of ions produced within the cathode/anode gap and those produced downstream of the anode. This new anode design provides a means to suppress QE decay due to ionized gas in the beam line.