Local Hall effect in hybrid ferromagnetic/semiconductor devices
Local Hall effect in hybrid ferromagnetic/semiconductor devices
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DOI：
10.1063/1.2416000
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发表时间：
2007-01-08
影响因子：
4
通讯作者：
Shin, Kyung-Ho
中科院分区：
文献类型：
--
作者：
Hong, Jinki;Joo, Sungjung;Shin, Kyung-Ho
本文研究了磁场呈正弦分布的InAs二维电子气体系统中铁磁半导体器件的磁阻。他们的装置的磁阻很大。纵向电阻在外加磁场中有一个奇怪的附加贡献。在低温下它甚至变成负的，因为在低温下输运是弹道式的。基于数值分析，他们证实了他们的数据可以用由于负和正场区域的轮廓而产生的局部霍尔效应来解释。这种装置可能对未来的自旋电子学应用有用。(c) 2007年美国物理学会。
The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications. (c) 2007 American Institute of Physics.