Radiative lifetimes in Si I from laser-induced fluorescence in the visible, ultraviolet, and vacuum ultraviolet.
Radiative lifetimes in Si I from laser-induced fluorescence in the visible, ultraviolet, and vacuum ultraviolet.
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DOI：
10.1103/physreva.44.7134
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发表时间：
1991-12
期刊：
影响因子：
--
通讯作者：
O'Brian;Lawler
中科院分区：
文献类型：
--
作者：
O'Brian;Lawler
本文报道了中性硅中47个能级的辐射寿命。使用时间分辨的激光诱导荧光（LIF）对一束硅原子测量寿命。研究的跃迁跨越160- 410 nm的光谱范围。所使用的实验方法是广泛适用于测量寿命在几乎任何中性或单离子化元素使用LIF在可见光，紫外线和真空紫外光谱区域。寿命与以前报道的分支分数或分支比相结合，产生36个绝对跃迁概率，大多数总的不确定性为5- 10%。
Radiative lifetimes for 47 levels in neutral silicon are reported. Lifetimes are measured using time-resolved laser-induced fluorescence (LIF) on a beam of silicon atoms. The transitions studied span the spectral range 160--410 nm. The experimental methods used are broadly applicable for measuring lifetimes in almost any neutral or singly ionized element using LIF in the visible, ultraviolet, and vacuum-ultraviolet spectral regions. Lifetimes are combined with previously reported branching fractions or branching ratios to generate 36 absolute transition probabilities, most with total uncertainty of 5--10 %.