Amorphization in gallium arsenide by tin and iron ion implantation
Amorphization in gallium arsenide by tin and iron ion implantation
复制标题
锡和铁离子注入砷化镓的非晶化
DOI：
10.1016/0022-3093(90)90636-z
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发表时间：
1990
影响因子：
3.5
通讯作者：
H. Yoshida
中科院分区：
文献类型：
--
作者：
M. Taniwaki;H. Koide;T. Yoshiie;Y. Hayashi;H. Yoshida
在锡和铁离子注入的砷化镓中观察到三种类型的非晶化。一种是在锡离子注入样品中，观察到主要取决于沉积损伤能量的典型非晶化。通过在 673 K 下退火，非晶化区域以微孪晶的固相外延方式再结晶。第二种是在非晶/晶体界面处的应变辅助下锡离子注入样品中的非晶化。用小损伤能量产生的非晶层中短程化学计量的干扰很小，使得可以通过在 673 K 下退火以外延方式生长晶相，而无需微孪晶。最后一种是铁离子注入砷化镓中的非晶化。通过更多的注入或随后在 673 K 下退火，离子注入诱导的微孪晶结构转变为非晶结构。这种非晶化可以通过铁离子对混锌结构中四面体共价键的干扰来解释。
Three types of amorphization were observed in tin- and iron-ion implanted gallium arsenide. One is in tin-ion implanted samples, where the typical amorphization which depends mainly on the deposited damage energy was observed. The amorphized region recrystallizes in a solid phase epitaxial manner with microtwins by annealing at 673 K. The second is an amorphization in a tin-ion implanted sample with an assistance of the strain at the amorphous/crystalline interface. Little disturbance of the short-range stoichiometry in the amorphous layer created with a small damage energy makes it possible to grow the crystalline phase in an epitaxial manner without microtwins by annealing at 673 K. The last one is an amorphization in iron-ion implanted gallium arsenide. The ion-implantation-induced microtwin structure transforms into an amorphous structure by more implantation or by subsequent annealing at 673 K. This amorphization is explained by disturbance of the tetrahedral covalent bonding in zinc-blend structure by iron ions.