Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other
Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other
复制标题
通过制造彼此隔离的薄重硼掺杂多层团簇来改善 p 型 CVD 金刚石半导体性能
DOI：
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复制
发表时间：
2016
期刊：
影响因子：
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通讯作者：
T. Tabuchi and T. Ito
中科院分区：
文献类型：
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作者：
O. Maida;T. Tabuchi and T. Ito
