The Fabrication and Characterization of Well Aligned Petal-Like Arsenic-Doped Zinc Oxide Microrods
The Fabrication and Characterization of Well Aligned Petal-Like Arsenic-Doped Zinc Oxide Microrods
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DOI：
10.1088/0256-307x/28/10/108103
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发表时间：
2011-10
影响因子：
3.5
通讯作者：
Qiu-Ju 秋菊 Feng 冯;Jun-Yan 俊岩 Jiang 蒋;Peng-Cheng 鹏程 Tao 陶;Shuang 爽 Liu 刘;Rui-Zhuo 瑞卓 Xu 许;Meng-Ke 梦轲 Li 李;J. Sun 孙
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文献类型：
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作者：
Qiu-Ju 秋菊 Feng 冯;Jun-Yan 俊岩 Jiang 蒋;Peng-Cheng 鹏程 Tao 陶;Shuang 爽 Liu 刘;Rui-Zhuo 瑞卓 Xu 许;Meng-Ke 梦轲 Li 李;J. Sun 孙
采用化学气相沉积法，在不使用催化剂的情况下，在硅(100)衬底上生长了掺砷花瓣状氧化锌微棒。扫描电子显微镜显示，As掺杂得到了c轴择优取向的花瓣状氧化锌微棒，这与X射线衍射分析结果一致。得到的氧化锌微棒的平均长度约为2μm，边长约为100 nm。在11K的光致发光光谱中观察到与As有关的受主发射，受主结合能估计为128 meV。
Arsenic-doped petal-like zinc oxide microrods are grown on silicon (100) substrates by the chemical vapor deposition method without the use of catalysts. Scanning electron microscopy shows that As-doped petal-like ZnO microrods with a preferred c-axial orientation are obtained, which is well in accordance with x-ray diffraction analysis. The obtained ZnO microrods have uniform lengths of about 2 μm and side lengths of about 100 nm. As-related acceptor emissions are observed from photoluminescence spectra of the ZnO microrods at a temperature of 11 K. The acceptor binding energy is estimated to be 128 meV.