Long range order in AlxGa1-xN films grown by molecular beam epitaxy
Long range order in AlxGa1-xN films grown by molecular beam epitaxy
复制标题
DOI：
10.1063/1.119916
复制
发表时间：
1997-07-07
影响因子：
4
通讯作者：
Moustakas, TD
中科院分区：
文献类型：
--
作者：
Korakakis, D;Ludwig, KF;Moustakas, TD
报道了在蓝宝石和6 H-SiC衬底上用电子回旋共振辅助分子束外延生长的AlxGa_（1-xN）薄膜中首次观察到原子长程有序。通过使用X射线衍射研究超晶格峰（0001）、（0003）和（0005）来研究该现象。这些峰的相对强度被认为是最大的Al含量在30%-50%的范围内与理想的Al0.5Ga0.5N化学计量的有序结构的预期定性协议。发现膜中有序域的平均尺寸在膜厚度的4倍内。有序度取决于III/V通量比，并表现出较弱的依赖于Si掺杂。(C)1997年美国物理学会。
The first observation of atomic long range ordering in AlxGa1-xN thin films grown by electron cyclotron resonance assisted molecular beam epitaxy on sapphire and 6H-SiC substrates is reported. The phenomenon was investigated by studying the superlattice peaks (0001), (0003), and (0005) using x-ray diffraction. The relative intensity of these peaks was found to be largest for Al content in the 30%-50% range in qualitative agreement with expectations for an ordered structure of ideal Al0.5Ga0.5N stoichiometry. The average size of the ordered domains in the films was found to be within a factor of 4 of the films' thicknesses. The degree of ordering depends on the III/V flux ratio and exhibits a weaker dependence on Si doping. (C) 1997 American Institute of Physics.