Photoluminescence due to isoelectric oxygen and tellurium traps in II–VI alloys
Photoluminescence due to isoelectric oxygen and tellurium traps in II–VI alloys
复制标题
II-VI 族合金中等电点氧和碲陷阱引起的光致发光
DOI:
10.1016/0022-2313(70)90002-5
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发表时间:
1970
影响因子:
3.6
通讯作者:
A. Strauss
中科院分区:
文献类型:
--
作者:
G. Iseler;A. Strauss
Photoluminescence spectra at 4.2°K due to oxygen and tellurium isoelectronic traps have been observed in the following II–VI solid solutions prepared by annealing powder mixtures of the binary compounds: O inZnTe1−xSex,ZnTe1−xSx, andZn1−yCdyTe; Te inZn1−yCdyS,Zn1−yCdySe,ZnS1−xSex,CdS1−xSex, andZnTe1−xSex. In all cases the qualitative change in trapping energy with alloy composition, as indicated by the change in photolumunescence energy relative to the energy gap, is consistent with the isoelectronic trap model. According to this model, the trapping energy for an exciton bound to the trap should depend primarily on the difference in electronegativity between the impurity and the host atom which it replaces. For alloys involving substitution on the anion sub-lattice, the trapping energy decreases markedly with increasingxexcept for Te inZnTe1−xSex, where the opposite change occurs. For alloys involving substitution on the cation sub-lattice, the trapping energy does not depend strongly ony.