InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
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极短栅沟道距离的 InP 基高电子迁移率晶体管
DOI：
10.1143/jjap.42.2214
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发表时间：
2003
影响因子：
1.5
通讯作者：
T. Mimura
中科院分区：
文献类型：
--
作者：
A. Endoh;Y. Yamashita;K. Shinohara;K. Hikosaka;T. Matsui;S. Hiyamizu;T. Mimura
我们制造了栅沟道距离非常短的 25 nm 栅极晶格匹配 InAlAs/InGaAs 高电子迁移率晶体管 (HEMT)。使用两步凹进栅极技术，我们将栅极沟道距离缩短至 4 nm。我们发现截止频率 fT 随着栅极沟道距离 d 的减小而增加。这种现象可以通过栅极下方的电子速度随着 d 的减小而增加来解释。我们获得了 500 GHz 的 fT，d 为 4 nm。我们还使用相同的加工技术制备了 25 nm 栅极赝晶 In0.52Al0.48As/In0.7Ga0.3As HEMT，并获得了 562 GHz 的 fT 和 4 nm 的 d。该 fT 是迄今为止报告的任何类型晶体管的最高值。
We fabricated 25-nm-gate lattice-matched InAlAs/InGaAs high electron mobility transistors (HEMTs) with a very short gate-channel distance. Using the two-step-recessed gate technique, we reduced the gate-channel distance to 4 nm. We found that the cutoff frequency fT increases with decreasing gate-channel distance d. This phenomenon can be explained by an increase in electron velocity under the gate with decreasing d. We obtained an fT of 500 GHz with a d of 4 nm. We also fabricated 25-nm-gate pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs using the same processing technique, and obtained an fT of 562 GHz with a d of 4 nm. This fT is the highest value yet reported for a transistor of any type.