Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates
Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates
复制标题
在蚀刻绝缘体上硅基板上制造的光电导多层石墨烯光电探测器
DOI：
10.1088/1674-1056/26/2/028101
复制
发表时间：
2017
影响因子：
1.7
通讯作者：
Dongdong Yin
中科院分区：
文献类型：
--
作者：
Yubing Wang;Weihong Yin;Qin Han;Xiaohong Yang;Han Ye;Qianqian Lv;Dongdong Yin
近年来，石墨烯基光电探测器得到了迅速发展。然而，由于石墨烯的光吸收强度较弱，它们的光响应性通常较低。在本文中，我们在蚀刻绝缘体上的硅衬底上制作了光导多层石墨烯（MLG）光电探测器。光响应性超过
Recently, graphene-based photodetectors have been rapidly developed. However, their photoresponsivities are generally low due to the weak optical absorption strength of graphene. In this paper, we fabricate photoconductive multi-layer graphene (MLG) photodetectors on etched silicon-on-insulator substrates. A photoresponsivity exceeding