Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses
Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses
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DOI：
10.1038/s41928-020-00506-4
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发表时间：
2020-11-30
影响因子：
34.3
通讯作者：
Jungwirth, T.
中科院分区：
文献类型：
--
作者：
Kaspar, Z.;Surynek, M.;Jungwirth, T.
电脉冲和短光脉冲可用于确定地诱导和逆转反铁磁cumna中的纳米碎片域状态，这一过程可以通过系统电阻的变化来探测。反铁磁体具有超快动力学、对外部磁场不敏感、无杂散磁场等特点，在自旋电子器件的研制中具有潜在的应用价值。与铁磁类似，反铁磁体可以在集体磁序向量的方向上存储信息。然而，在简单的反铁磁薄膜中，读出的磁电阻率信号很弱，并且尚未实现通过光激发来重新定向磁序向量。本文报道了利用电脉冲或超短光脉冲将反铁磁cumna可逆和可重复地猝灭成纳米碎片域态。室温下，该体系的电阻率变化接近20%，与铁磁多层材料的巨磁阻比相当。我们还通过光学反射率获得信号读出。
Electrical and short optical pulses can be used to deterministically induce and reverse a nano-fragmented domain state in antiferromagnetic CuMnAs, in a process that can be probed via changes in the resistance of the system.Antiferromagnets are of potential use in the development of spintronic devices due to their ultrafast dynamics, insensitivity to external magnetic fields and absence of magnetic stray fields. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, the readout magnetoresistivity signals in simple antiferromagnetic films are weak, and reorientation of the magnetic order vector via optical excitation has not yet been achieved. Here we report the reversible and reproducible quenching of antiferromagnetic CuMnAs into nano-fragmented domain states using either electrical or ultrashort optical pulses. The changes in the resistivity of the system approach 20% at room temperature, which is comparable to the giant magnetoresistance ratios in ferromagnetic multilayers. We also obtain a signal readout by optical reflectivity.