A Study of Growth Processes in Germanium Dendrites Using Pulse Electroplating Techniques
A Study of Growth Processes in Germanium Dendrites Using Pulse Electroplating Techniques
复制标题
利用脉冲电镀技术研究锗枝晶的生长过程
DOI：
10.1149/1.2428053
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发表时间：
1961
影响因子：
3.9
通讯作者：
R. Smith
中科院分区：
文献类型：
--
作者：
R. Smith
脉冲电镀显示锗枝晶电阻率的变化。枝晶边缘的演化是从电阻率变化的配置推导出来的。结果表明，枝晶生长至少涉及两个过程，Camp（1）的工作表明，脉冲电镀技术可以用来揭示半导体单晶的电阻率变化。在这个实验室里进行了沿着与坎普相同的路线进行的研究，得到了类似的结果（2）。这种方法的成功导致其应用于锗枝晶，这些枝晶上发现的电阻率变化给了我们新的见解枝晶生长过程。
Pulse electroplating is shown to reveal resistivity variations in germanium dendrites. The evolution of the edges of the dendrites is deduced from the configuration of the resistivity variations. The results suggest that dendritic growth involves at least two processes.The work of Camp (1) showed that the technique best described as pulse electroplating could be used to reveal resistivity variations in semiconductor single crystals. Investigations along the same lines as those of Camp were done at this laboratory with similar results (2). The success of this method led to its application to germanium dendrites, and resistivity variations found on these dendrites have given us new insight into dendritic growth processes.