990 nm High-Power High-Beam-Quality DFB Laser with Narrow Linewidth Controlled by Gain-Coupled Effect
990 nm High-Power High-Beam-Quality DFB Laser with Narrow Linewidth Controlled by Gain-Coupled Effect
复制标题
增益耦合效应控制的窄线宽 990 nm 高功率高光束质量 DFB 激光器
DOI：
10.1109/jphot.2019.2893961
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发表时间：
2019
影响因子：
2.4
通讯作者：
Lijun Wang
中科院分区：
文献类型：
--
作者：
Yuxin Lei;Yongyi Chen;Feng Gao;Dezheng Ma;Peng Jia;Qiu Cheng;Hao Wu;Chunkao Ruan;Lei Liang;Chao Chen;Jun Zhang;Jingyu Tian;Li Qin;Yongqiang Ning;Lijun Wang
在990 nm波长实现了基于脊形波导周期电流注入的高功率无再生增益耦合分布反馈半导体激光器。该器件仅采用标准的i线光刻工艺制作，具有微米级的精度，在高注入电流下获得了优异的性能。在3A电流下获得了大于0.681W的连续波功率。在1.4A时，单纵模连续波最大输出功率可达0.303W。窄线宽发射已达到3dB谱宽小于1.41 μ m。高边模抑制比大于35 dB。横向远场发散角仅为15.05°，光束质量因子M2为1.245，实现了横向近衍射极限发射。这对于单模光纤耦合作为泵浦源以及其它要求高功率、高光束质量、工艺简单的应用场合是非常有利的。
High-power single-longitudinal-mode regrowth-free gain-coupled distributed feedback laser diode based on ridge waveguide with periodic current injection is achieved at 990 nm. Our device is fabricated only by standard i-line lithography with micron-scale precision, obtains an excellent performance at high injection current. A continuous-wave power of over 0.681 W is achieved at 3 A. The maximum continuous-wave power at single-longitudinal-mode operation is up to 0.303 W at 1.4 A. Narrow linewidth emission has been reached with a 3 dB spectrum width less than 1.41 pm. The high side mode suppression ratio is over 35 dB. The lateral far field divergence angle is only 15.05°, the beam quality factor M2 is 1.245, achieving a laterally near-diffraction-limit emission. It is more beneficial for single-mode fiber coupling as pumping sources and other applications which require high beam quality at high power with easy fabrication technique.