Arsenic-Doped CdSeTe Solar Cells Achieve World Record 22.3% Efficiency
Arsenic-Doped CdSeTe Solar Cells Achieve World Record 22.3% Efficiency
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掺砷%20CdSeTe%20Solar%20Cells%20实现%20世界%20纪录%2022.3%%20效率
DOI：
10.1109/jphotov.2023.3282581
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发表时间：
2023
影响因子：
3
通讯作者：
D. Lu
中科院分区：
文献类型：
--
作者：
R. Mallick;X. Li;C. Reich;X. Shan;W. Zhang;T. Nagle;E. Bok;N. Bicakci;D. Rosenblatt;R. Modi;C. Farshchi;J. Lee;S. Hack;N. Grover;Wolf W.K;D. Metzger;G. Lu;Xiong;D. Lu
三十多年来，铜一直是掺杂CdSeTe太阳能电池、形成有效接触和最大化效率的关键。同时，铜缺陷化学的稳定性、载流子浓度以及效率的进一步提高都是有限的。在本文中，通过实现As掺杂，证明了在没有铜的情况下，22.3%的世界记录的效率，这也提高了稳定性、温度系数和能量产率。V组技术相对于铜的效率交叉点是由开路电压的稳步改善推动的。在这里，认证的记录单元达到了899 mV的开路电压，同时保持了31.4 mA/cm2的高光电流值；填充系数相对较低，为78.9%。结合80%的填充系数和这里报告的917 mV的最高开路电压值，可以在短期内实现23%的效率。表征表明，减少重组和提高活性为实现25%的效率提供了可行的途径。
For more than three decades, Cu has been critical to dope CdSeTe solar cells, form effective contacts, and maximize efficiency. At the same time, Cu defect chemistry has limited stability, carrier concentration, and further efficiency improvements. In this article, 22.3% world record efficiency is demonstrated without Cu by implementing As doping, which also improves stability, temperature coefficient, and energy yield. The efficiency crossing point of Group V technology relative to Cu has been driven by steady improvements in the open-circuit voltage. Here, the certified record cell reaches open-circuit voltage of 899 mV while retaining high photocurrent values of 31.4 mA/cm2; the fill factor is relatively low at 78.9%. Coupling 80% fill factor with top open-circuit voltage values of 917 mV reported here offers a near-term path to 23% efficiency. Characterization indicates reducing recombination and improving activation provide viable paths to 25% efficiency.
影响因子：
56.7
作者：
Onno, Arthur;Reich, Carey;Holman, Zachary C.
通讯作者：
Holman, Zachary C.
影响因子：
6.9
作者：
Kartopu, G.;Oklobia, O.;Irvine, S. J. C.
通讯作者：
Irvine, S. J. C.