Magnetoresistance of conductive filament in Ni/HfO2/Pt resistive switching memory
Magnetoresistance of conductive filament in Ni/HfO2/Pt resistive switching memory
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DOI：
10.7567/jjap.54.05ed02
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发表时间：
2015-05
影响因子：
1.5
通讯作者：
S. Otsuka;Yoshifumi Hamada;D. Ito;Tomohiro Shimizu;S. Shingubara
中科院分区：
文献类型：
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作者：
S. Otsuka;Yoshifumi Hamada;D. Ito;Tomohiro Shimizu;S. Shingubara
在具有Ni电极的导电桥随机存取存储器（CBRAM）中，在设置过程期间使用高电流顺应性形成铁磁导电丝（CF）。我们研究了CF在Ni/HfO2/Pt CBRAM中使用的设置过程中，低温特性，和各向异性磁阻（AMR）的电流依从性的依赖性。设置过程发生时，正偏压仅施加到Ni电极，因此，开关现象显示极性。导通状态（低电阻状态）的电阻取决于2和5mA之间的电流顺应性。器件的导通状态表现出金属导电特性，这是由电阻的温度依赖性所暗示的。当使用高电流顺应性（5 mA）进行编程时，ON状态显示AMR，这是铁磁CF形成的直接证据。这表明铁磁性CF的形成与从Ni电极扩散的Ni离子的积累有关。关断状态（高电阻状态）电阻随着温度的降低而略微增加，并且没有观察到AMR。
Ferromagnetic conductive filaments (CFs) were formed in a conductive-bridge random access memory (CBRAM) with a Ni electrode using high current compliances during a set process. We investigated CFs in a Ni/HfO2/Pt CBRAM using the current compliance dependences of the set process, low-temperature characteristics, and anisotropic magnetoresistance (AMR). Set processes occurred when a positive bias was applied to the Ni electrode only; therefore, the switching phenomena showed polarity. The resistance of the ON state (low resistance state) was dependent on the current compliance between 2 and 5 mA. The ON state of the device showed a metallic conduction property, suggested by the temperature dependence of resistance. When a high current compliance (5 mA) was used for programming, the ON state showed AMR, which was direct evidence of ferromagnetic CF formation. This suggests that the formation of a ferromagnetic CF is associated with the accumulation of Ni ions that diffused from the Ni electrode. The OFF-state (high resistance state) resistance slightly increased with decreasing temperature and AMR was not observed.