Highly doped polycrystalline silicon microelectrodes reduce noise in neuronal recordings in vivo.
Highly doped polycrystalline silicon microelectrodes reduce noise in neuronal recordings in vivo.
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DOI：
10.1109/tnsre.2010.2056389
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发表时间：
2010-10
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影响因子：
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通讯作者：
Muthuswamy J
中科院分区：
文献类型：
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作者：
Saha R;Jackson N;Patel C;Muthuswamy J
本研究的目的是：1）首次实验验证体掺杂多晶硅在小幅度电压范围（0-200 μV）内的非线性电流-电位特性; 2）测试掺杂多晶硅微电极是否由于上述特性而选择性地衰减来自单个神经元电记录的噪声幅度（0-15 μV）。在高掺杂多晶硅中，对于噪声幅度的典型电压，实验测量到几百千欧姆的体电阻，对于神经信号幅度的典型电压（>150-200 μV），实验测量到9-10 kΩ的体电阻。急性多单位测量和噪声测量n = 6和n = 8麻醉成年大鼠，分别使用多晶硅和钨微电极。两种微电极记录的动作电位峰间振幅无显著差异（p > 0.10）。然而，钨微电极记录的噪声功率（26.36 ± 10.13 pW）显著高于多晶硅微电极记录的相应值（7.49 ± 2.66 pW）（p < 0.001）。我们的结论是，多晶硅微电极的结果在选择性衰减的噪声功率在电记录相比，钨微电极。与钨微电极相比，这种噪声的降低可能是由于在对应于多单元测量中的噪声的电压范围内，由高掺杂块状多晶硅提供的呈指数级更高的体电阻。
The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0–200 μV) and 2) test if noise amplitudes (0–15 μV) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9–10 kΩ for voltages typical of neural signal amplitudes (>150–200 μV). Acute multiunit measurements and noise measurements were made in n = 6 and n = 8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ± 10.13 pW) was significantly higher (p < 0.001) than the corresponding value in polycrystalline silicon microelectrodes (7.49 ± 2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements.