A comparative study of Al and LiF:Al interfaces with poly (3-hexylthiophene) using bias dependent photoluminescence technique
A comparative study of Al and LiF:Al interfaces with poly (3-hexylthiophene) using bias dependent photoluminescence technique
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DOI：
10.1016/j.orgel.2008.05.012
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发表时间：
2008-10
影响因子：
3.2
通讯作者：
Vipul Singh;A. Thakur;S. Pandey;W. Takashima;K. Kaneto
中科院分区：
文献类型：
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作者：
Vipul Singh;A. Thakur;S. Pandey;W. Takashima;K. Kaneto
用光致发光光谱定性研究了聚3-己基噻吩（P3HT）与铝（Al）和LiF改性铝（LiF：Al）的界面性质。据观察，在原始P3HT膜上涂覆Al导致链内无序程度增加。此外，观察到峰值PL强度的蓝移。这些观察结果已被解释的基础上的链内无序的Al通过热蒸发沉积在P3HT膜。研究了ITO/P_3HT/Al和ITO/P_3HT/LiF：Al肖特基电池的PL谱随偏压的变化。在反向偏压条件下，PL猝灭被发现直接关系到耗尽层的宽度。耗尽宽度的增加被认为是更高的Al电池相比，LiF：Al电池。然而，在LiF：Al涂覆的电池中的光电流更高。这些观察到的结果已解释的基础上，在各自的频带排列的差异。
The qualitative nature of the interface of poly (3-hexylthiophene) (P3HT) with Aluminum (Al) and LiF modified Aluminum (LiF:Al) has been studied using photoluminescence (PL) spectra. It was observed that coating Al on pristine P3HT film resulted in an increase in the degree of intrachain disorder. Also, a blue shift in the peak PL intensity was observed. These observations have been explained on the basis of intrachain disorder induced by the deposition of Al via thermal evaporation on P3HT film. Furthermore, bias dependence of PL spectra for ITO/P3HT/Al and ITO/P3HT/LiF:Al type Schottky cells were studied. Under the reverse bias conditions, PL quenching was found to relate directly to the depletion layer width. The increase in depletion width was found to be higher in the Al cell as compared to that of the LiF:Al cell. However, the photocurrents were higher in LiF:Al coated cells. These observed results have been explained on the basis of the difference in their respective band alignment.