High-density switchable skyrmion-like polar nanodomains integrated on silicon
High-density switchable skyrmion-like polar nanodomains integrated on silicon
复制标题
集成在硅上的高密度可切换类斯格明子极性纳米域
DOI：
10.1038/s41586-021-04338-w
复制
发表时间：
2022-03-03
期刊：
影响因子：
64.8
通讯作者：
Pan, Xiaoqing
中科院分区：
文献类型：
--
作者：
Han, Lu;Addiego, Christopher;Pan, Xiaoqing
铁电体中的拓扑畴（1-5）由于其新颖的功能和在电子器件中的潜在应用（6，7）而受到广泛关注。然而，到目前为止，这种拓扑极性结构仅在氧化物衬底上生长的超晶格中观察到，这限制了它们在硅基电子学中的应用。在这里，我们报告实现室温skyrmion极性纳米畴钛酸铅/钛酸锶双层转移到硅上。此外，外部电场可以可逆地将这些纳米畴转换为另一种类型的极性织构，这大大改变了它们的电阻行为。极化组态调制电阻归因于两种类型的极性织构的核心中的不同的能带弯曲和电荷载流子分布。在硅上集成高密度（大于200吉比特/平方英寸）可切换的类skyrmion极性纳米畴可以实现使用氧化物中的拓扑极性结构的非易失性存储器应用。
Topological domains in ferroelectrics(1-5)have received much attention recently owing to their novel functionalities and potential applications(6,7) in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limitstheir applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polartexture, which substantially modifiestheir resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides.