Optically induced coupling of two magnetic dopant spins by a photoexcited hole in a Mn-doped InAs/GaAs quantum dot.
Optically induced coupling of two magnetic dopant spins by a photoexcited hole in a Mn-doped InAs/GaAs quantum dot.
复制标题
Mn 掺杂 InAs/GaAs 量子点中的光激发空穴对两种磁性掺杂剂自旋的光致耦合。
DOI：
10.1103/physrevlett.111.187401
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发表时间：
2013
影响因子：
8.6
通讯作者：
Aristide Lemaître
中科院分区：
文献类型：
--
作者：
O. Krebs;Aristide Lemaître
我们报道了在单个InAs/GaAs量子点中由Mn掺杂剂在其中性受主态A（0）中提供的两个自旋之间的光诱导耦合的证据。耦合的发生是由于两个掺杂剂自旋中的每一个与光生空穴之间的同时交换相互作用。在纵向磁场和垂直磁场中获得的显微光致发光光谱揭示了四种自旋组态的分裂|J（1）= ± 1，J（2）= ± 1}是由于2A（0）-空穴交换相互作用。我们用简化的自旋哈密顿模型对实验数据进行了全面的解释，更具体地说，空穴介导的耦合类似于两个A（0）自旋之间的ε（12）-70 μeV交换相互作用.
We report evidence of a photoinduced coupling between two spins provided by Mn dopants in their neutral acceptor state A(0) in a single InAs/GaAs quantum dot. The coupling occurs due to simultaneous exchange interactions between each of the two dopant spins and a photocreated hole. Microphotoluminescence spectroscopy achieved both in longitudinal and perpendicular magnetic fields reveals the splitting of the four spin configurations |J(1) = ± 1,J(2) = ± 1} due to the 2A(0)-hole exchange interaction. We obtain a comprehensive interpretation of the experimental data with a simplified spin Hamiltonian model, which more specifically shows that the hole-mediated coupling is similar to a ε(12)-70 μeV exchange interaction between both A(0) spins.