Composition and structure of NiTiCu shape memory thin films
Composition and structure of NiTiCu shape memory thin films
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NiTiCu形状记忆薄膜的成分与结构
DOI：
10.1088/0960-1317/10/2/308
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发表时间：
2000
影响因子：
2.3
通讯作者：
J. Lebrun
中科院分区：
文献类型：
--
作者：
N. Frantz;A. Bosseboeuf;E. Dufour;Valérie Stambouli;G. Nouet;W. Seiler;J. Lebrun
报道了硅上 NiTiCu 形状记忆合金薄膜沉积的初步结果。这些薄膜的特性（成分、密度和电阻率）与溅射过程中的工作气压和射频功率相关。然后对薄膜进行退火以使它们结晶。这些薄膜的特性作为退火和测量温度的函数进行了检查，以证明形状记忆行为。
Preliminary results on NiTiCu shape memory alloy thin-film deposition on silicon are reported. Characteristics of these films (composition, density and electrical resistivity) were correlated with working gas pressure and rf power during sputtering. The films were then annealed in order to crystallize them. The properties of these films were examined as functions of annealing and measurement temperatures in order to evidence shape memory behaviour.