InAlN underlaver for near ultraviolet InGaN based light emitting diodes
InAlN underlaver for near ultraviolet InGaN based light emitting diodes
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DOI：
10.7567/1882-0786/ab0147
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发表时间：
2019-03-01
影响因子：
2.3
通讯作者：
Grandjean, Nicolas
中科院分区：
文献类型：
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作者：
Haller, Camille;Carlin, Jean-Francois;Grandjean, Nicolas
我们报道了InAlN衬底(UL)以提高近紫外光(NUV)发光二极管(LED)的效率。虽然InGaN UL通常用于高效率的蓝色LED，但它可能会吸收较短波长的光。与GaN晶格匹配的InAlN的禁带宽度为4.6 eV。这可以缓解NUV LED的吸收问题。结果表明，使用InAlN UL的405 nm单InGaN/GaN量子阱LED的内部量子效率接近70%，而不使用UL的LED的内部量子效率不到10%。由于在InAlN/GaN界面具有高掺杂水平的极化电荷屏蔽，获得了良好的I-V特性。(C)2019年日本应用物理学会
We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhibits a bandgap of 4.6 eV. This allows alleviating absorption issues in NUV LEDs. We demonstrate that the internal quantum efficiency of 405 nm single InGaN/GaN quantum well LEDs with InAlN UL is similar to 70% compared to less than 10% for LEDs without UL. Excellent I-V characteristics are achieved thanks to polarization charge screening with high doping level at the InAlN/GaN interface. (C) 2019 The Japan Society of Applied Physics