Epitaxial growth of InN thin films by plasma-enhanced atomic layer deposition
Epitaxial growth of InN thin films by plasma-enhanced atomic layer deposition
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通过等离子体增强原子层沉积外延生长 InN 薄膜
DOI：
10.1063/1.5054155
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发表时间：
2018-12-28
影响因子：
3.2
通讯作者：
Wang, Li
中科院分区：
文献类型：
--
作者：
Feng, Xingcan;Peng, Hong;Wang, Li
在这项研究中，我们报告的结晶氮化铟薄膜的生长等离子体增强原子层沉积（PE-ALD）。通过系统地研究生长参数，我们确定了PE-ALD生长结晶InN薄膜的工艺窗口。在最佳条件下，我们比较了Si（100），Al_2 O_3（0001）和ZnO（0001）衬底与InN不同的晶格失配。高分辨X射线衍射（HR-XRD）测试表明，我们在ZnO（0001）衬底上获得了晶格失配最小的InN薄膜。晶体取向关系为InN[0001]<$ZnO[0001]和InN[10−10]<$ZnO[10−10]。HR-XRD和高分辨透射电子显微镜测量表明，InN薄膜完全弛豫，在界面处没有观察到空隙或夹层。结果表明，PE-ALD可以在低温下外延生长InN薄膜。本文报道了用等离子体增强原子层沉积（PE-ALD）方法生长InN薄膜。通过系统地研究生长参数，我们确定了PE-ALD生长结晶InN薄膜的工艺窗口。在最佳条件下，我们比较了Si（100），Al_2 O_3（0001）和ZnO（0001）衬底与InN不同的晶格失配。高分辨X射线衍射（HR-XRD）测试表明，我们在ZnO（0001）衬底上获得了晶格失配最小的InN薄膜。晶体取向关系为InN[0001]<$ZnO[0001]和InN[10−10]<$ZnO[10−10]。HR-XRD和高分辨透射电子显微镜测量表明，InN薄膜完全弛豫，在界面处没有观察到空隙或夹层。结果表明，PE-ALD法可以在较低的温度下实现InN薄膜的外延生长。
In this study, we report on the growth of crystalline InN thin films by plasma-enhanced atomic layer deposition (PE-ALD). By systematically investigating the growth parameters, we determined the process window for crystalline InN films growth by PE-ALD. Under the optimal conditions, we compared Si (100), Al2O3 (0001), and ZnO (0001) substrates with different lattice mismatches to InN. High resolution X-ray diffraction (HR-XRD) measurements showed that we obtained the epitaxial InN thin film on the ZnO (0001) substrate, which has the smallest lattice mismatch. The crystal orientation relationship is found to be InN[0001]∥ZnO[0001] and InN[10−10]∥ZnO[10−10]. HR-XRD and high resolution transmission electron microscopy measurements revealed that the InN films are fully relaxed, and no voids or interlayer is observed at the interface. Our results show that the epitaxial growth of the InN film can be obtained by PE-ALD at low temperature.In this study, we report on the growth of crystalline InN thin films by plasma-enhanced atomic layer deposition (PE-ALD). By systematically investigating the growth parameters, we determined the process window for crystalline InN films growth by PE-ALD. Under the optimal conditions, we compared Si (100), Al2O3 (0001), and ZnO (0001) substrates with different lattice mismatches to InN. High resolution X-ray diffraction (HR-XRD) measurements showed that we obtained the epitaxial InN thin film on the ZnO (0001) substrate, which has the smallest lattice mismatch. The crystal orientation relationship is found to be InN[0001]∥ZnO[0001] and InN[10−10]∥ZnO[10−10]. HR-XRD and high resolution transmission electron microscopy measurements revealed that the InN films are fully relaxed, and no voids or interlayer is observed at the interface. Our results show that the epitaxial growth of the InN film can be obtained by PE-ALD at low temperature.