Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers
Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers
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DOI：
10.1063/1.4922447
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发表时间：
2015-06
影响因子：
4
通讯作者：
Ryohei Asahara;I. Hideshima;H. Oka;Y. Minoura;Shingo Ogawa;A. Yoshigoe;Y. Teraoka;T. Hosoi;T. Shimura;Heiji Watanabe
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文献类型：
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作者：
Ryohei Asahara;I. Hideshima;H. Oka;Y. Minoura;Shingo Ogawa;A. Yoshigoe;Y. Teraoka;T. Hosoi;T. Shimura;Heiji Watanabe
先进的金属/高k/Ge栅叠层的亚纳米等效氧化物厚度（EOT）和改善的界面性能，通过控制界面反应，使用氧化铝（AlOx）夹层证明。通过在Ge上沉积AlOx和氧化铪（HfOx）层并随后进行等离子体氧化的分步原位过程来制备Pt/HfO 2/AlOx/GeOx/Ge堆叠结构。通过物理和电学表征的综合研究揭示了AlOx夹层、等离子体氧化和金属电极作为覆盖层对EOT缩放、改善的界面质量和堆叠的热稳定性的明显影响。通过系统的工艺优化，EOT缩小到0.56 nm，界面态密度非常低，为2.4 × 1011 cm− 2 eV −1，EOT为亚nm，热稳定性也很好。
Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlOx) interlayers. A step-by-step in situ procedure by deposition of AlOx and hafnium oxide (HfOx) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO2/AlOx/GeOx/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlOx interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 1011 cm−2eV−1 with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.