Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis
Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis
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DOI：
10.1088/0957-4484/19/17/175202
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发表时间：
2008-04-30
期刊：
影响因子：
3.5
通讯作者：
Khondaker, Saiful I.
中科院分区：
文献类型：
--
作者：
Stokes, Paul;Khondaker, Saiful I.
我们提出了一个简单的和可扩展的技术，用于制造的溶液处理和局部栅控碳纳米管场效应晶体管（CNT-FET）。该方法是基于通过AC介电电泳（DEP）将来自二氯乙烷的单个单壁碳纳米管定向组装到预图案化的源极和漏极上，中间具有局部铝栅极。局部栅控CNT-FET器件与全局背栅相比显示出上级性能，开关比> 10（4），最大亚阈值摆幅为170 mV/dec。局部底栅控DEP组装的CNT-FET将促进互补金属氧化物半导体（CMOS）兼容纳米电子器件的大规模制造。
We present a simple and scalable technique for the fabrication of solution processed and local-gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on the directed assembly of individual single-walled carbon nanotubes from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle. Local-gated CNT-FET devices display superior performance compared to a global back gate with on-off ratios > 10(4) and maximum subthreshold swings of 170 mV/dec. The local bottom-gated DEP-assembled CNT-FETs will facilitate large-scale fabrication of complementary metal-oxide-semiconductor (CMOS) compatible nanoelectronic devices.