The Impact of Parasitic Inductance on the Performance of Silicon–Carbide Schottky Barrier Diodes
The Impact of Parasitic Inductance on the Performance of Silicon–Carbide Schottky Barrier Diodes
复制标题
寄生电感对碳化硅肖特基势垒二极管性能的影响
DOI：
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发表时间：
2012
影响因子：
6.7
通讯作者：
P. Mawby
中科院分区：
文献类型：
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作者：
O. Alatise;N. Parker;D. Hamilton;P. Mawby
1200V/300A碳化硅肖特基势垒二极管(SiCSBD)和Si Pin二极管模块在-40°C到125°C的钳位电感开关条件下进行了自由开关测试，在此温度范围内，Si Pin二极管的关断开关能量增加了100%，而SiC二极管的关断开关能量在125°C时保持不变，比Si Pin二极管低50%。然而，由于二极管耗尽电容、寄生电感和二极管电阻之间形成的RLC电路的响应不足，SiCSBD受到振铃/振荡的影响。这些振荡会导致额外的功率损耗，导致在-40°C和0°C时，SiCSBD的性能被硅引脚二极管超过。与硅器件相比，SiCSBD的较高耗尽电容和较低的串联电阻导致了较低的衰减因数。此外，硅中导通电阻的正温度系数有助于在高功率水平下获得更好的减振效果，而碳化硅中导通电阻的温度不变性意味着振荡在高温下仍然存在。用SPICE仿真和实验测量验证了所建立的电路阻尼和振荡频率的解析表达式。
1200V/300A silicon carbide Schottky barrier diode (SiC SBD) and Si pin diode modules have been tested as free-wheeling diodes under conditions of clamped inductive switching over a temperature range between -40 °C and 125 °C. Over the temperature range, the turn-OFF switching energy increases by 100% for the Si pin diode, whereas that of the SiC diode is temperature invariant and is 50% less than that of the Si pin diode at 125°C. However, the SiC SBD suffers from ringing/oscillations due to an underdamped response to an RLC circuit formed among the diode depletion capacitance, parasitic inductance, and diode resistance. These oscillations contribute to additional power losses that cause the SiC SBDs to be outperformed by the Si pin diodes at -40 °C and 0 °C. The higher depletion capacitance and lower series resistance of the SiC SBD contribute to a lower damping factor compared to the Si device. Furthermore, the positive temperature coefficient of the ON-state resistance in silicon contributes to better damping at high power levels, whereas the temperature invariance of the ON-state resistance in SiC means the oscillations persist at high temperatures. SPICE simulations and experimental measurements have been used to validate analytical expressions that have been developed for the circuit damping and oscillation frequency.