When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors
When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors
复制标题
当纳米线遇到超高铁电场——高性能全耗尽纳米线光电探测器
DOI：
10.1021/acs.nanolett.6b00104
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发表时间：
2016
期刊：
影响因子：
10.8
通讯作者：
Lu Wei
中科院分区：
文献类型：
--
作者：
Zheng Dingshan;Wang Jianlu;Hu Weida;Liao Lei;Fang Hehai;Guo Nan;Wang Peng;Gong Fan;Wang Xudong;Fan Zhiyong;Wu Xing;Meng Xiangjian;Chen Xiaoshuang;Lu Wei
一维半导体纳米线具有优良的光电特性，在光电探测器中得到了广泛的应用。然而，本征载流子浓度在一定程度上导致可观的暗电流，这限制了器件的探测率。在这里，我们制作了一种新型的铁电增强侧栅NW光电探测器。NW沟道中的本征载流子可以被P（VDF-TrFE）铁电聚合物极化产生的静电场完全耗尽。在这种情况下，暗电流显著减小，因此即使在去除栅极电压时，光电探测器的灵敏度也增加。在830 nm波长处，单个InP NW光电探测器的光电导增益为4.2 × 105，响应度为2.8 × 105 A W-1，比探测率（D*）为9.1 × 1015 Jones。为了进一步证明这种结构的普适性，我们还制作了在520 nm波长下，光电导增益为1.2 × 107，响应度为5.2 × 106 A，D ~* 达1.7 × 10 ~（18）Jones的铁电聚合物侧栅单CdS NW光电探测器。总的来说，我们的工作展示了一种新的方法来制造一个可控的，全耗尽，高性能的NW光电探测器。这对基于半导体纳米线的高性能光电子器件的新型器件结构设计具有启发意义。
One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 × 105, responsivity of 2.8 × 105A W–1, and specific detectivity (D*) of 9.1 × 1015Jones at λ = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 × 107, responsivity of 5.2 × 106A W–1andD* up to 1.7 × 1018Jones at λ = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.