Voltage Control of Patterned Metal/Insulator Properties in Oxide/Oxyfluoride Lateral Perovskite Heterostructures via Ion Gel Gating
Voltage Control of Patterned Metal/Insulator Properties in Oxide/Oxyfluoride Lateral Perovskite Heterostructures via Ion Gel Gating
复制标题
离子凝胶门电压控制氧化物/氟氧化物钙钛矿横向异质结构中的图案化金属/绝缘体性能
DOI：
10.1002/adfm.202208434
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发表时间：
2022-09
影响因子：
19
通讯作者：
Benjamin M. Lefler;W. Postiglione;C. Leighton;S. May
中科院分区：
文献类型：
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作者：
Benjamin M. Lefler;W. Postiglione;C. Leighton;S. May
在本研究中，对钙钛矿氧化物膜中图案性特性的动态控制可以使电子，磁性和光学设备进行新的体系结构。使用室温离子凝胶门的特性。电化学氧化还原的金属srfeo3，而SRFEO2F区域仍然具有牢固的绝缘性，并且不受离子凝胶门的影响。 。图案化的电子，光学和磁性特性应广泛适用于氧化物材料，适合于氟化，以及可能的其他形式的阴离子取代。
Dynamic control of patterned properties in perovskite oxide films can enable new architectures for electronic, magnetic, and optical devices. In this study, it is shown that SrFeO3‐δ/SrFeO2F laterally‐heterostructured films enable voltage‐controlled tunable and reversible metal‐insulator patterned properties using room‐temperature ion gel gating. Specifically, SrFeO3‐δ film regions can be toggled between insulating HxSrFeO2.5 and metallic SrFeO3 by electrochemical redox, while SrFeO2F regions remain robustly insulating and are unaffected by ion gel gating. Various gating architectures are also compared and establish the advantages of employing a conductive substrate as the contacting electrode, as opposed to at the film surface, thereby achieving complete and reversible reduction and oxidation among SrFeO3‐δ, HxSrFeO2.5, and SrFeO3. This approach to voltage‐modulated patterned electronic, optical, and magnetic properties should be broadly applicable to oxide materials amenable to fluoridation, and potentially other forms of anion substitution.