Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal-Organic Vapor Phase Epitaxy
Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal-Organic Vapor Phase Epitaxy
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DOI：
10.1002/pssr.202100283
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发表时间：
2021-07-14
影响因子：
2.8
通讯作者：
Heffernan, Jon
中科院分区：
文献类型：
--
作者：
Sala, Elisa M.;Godsland, Max;Heffernan, Jon
采用金属有机物气相外延（MOVPE）技术，通过液滴外延（DE）在裸InP（001）上生长InAs量子点。覆盖层工程，用于控制量子点的大小和形状，探索在MOVPE的DE量子点。该方法允许在宽的波长范围内调谐QD发射，范围从O-到L-波段。通过宏观和微观光致发光（PL，μ PL）和透射电子显微镜（TEM）形态学的光学研究不同的InP帽层的效果。当覆盖层从20 nm减小到8 nm时，观察到QD发射波长的强500 nm蓝移，这通过掩埋QD的明显尺寸减小来反映。
InAs quantum dots (QDs) are grown on bare InP(001) via droplet epitaxy (DE) in metal-organic vapor phase epitaxy (MOVPE). Capping layer engineering, used to control QD size and shape, is explored for DE QDs in MOVPE. The method allows for the tuning of the QD emission over a broad range of wavelengths, ranging from the O- to the L-band. The effect of varying the InP capping layer is investigated optically by macro- and micro-photoluminescence (PL, mu PL) and morphologically by transmission electron microscopy (TEM). A strong 500 nm blueshift of the QD emission wavelength is observed when the capping layer is reduced from 20 to 8 nm, which is reflected by a clear size reduction of the buried QDs.