Characterization of high-quality epitaxial AlN films grown by MOVPE
Characterization of high-quality epitaxial AlN films grown by MOVPE
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MOVPE 生长的高质量外延 AlN 薄膜的表征
DOI：
10.1557/proc-693-i9.3.1
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
K. Hiramatsu
中科院分区：
文献类型：
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作者：
T. Shibata;K. Asai;T. Nagai;S. Sumiya;Mitsuhiro Tanaka;O. Oda;H. Miyake;K. Hiramatsu
采用低压金属有机物气相外延（LP-MOVPE）方法在C面蓝宝石衬底上生长了高质量的AlN外延膜，研究了AlN外延膜的整体晶体镶嵌性与位错行为之间的关系。AlN（0002）和（10-10）的典型X射线摇摆曲线（XRC）的半高宽（FWHM）值分别为80 arcsec和1800 arcsec。从透射电子显微镜（TEM）观察，刃型位错线程的AlN层，然而，几乎所有的螺旋型位错消失在早期的AlN生长阶段。AlN薄膜的位错密度在其表面区域低至约1 × 1010 cm-2。位错的分布被认为是由一个大的扭曲镶嵌和一个非常小的倾斜镶嵌。
This paper presents the correlation between overall crystal mosaicities and dislocation behaviors of high-quality AlN epitaxial films grown on a C-plane sapphire substrate using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. Typical full width at half maximum (FWHM) values of x-ray rocking curves (XRC) for (0002) and (10-10) of the AlN are 80arcsec and 1800arcsec, respectively. From transmission electron microscopy (TEM) observations, edge-type dislocations thread the AlN layer, however, almost all screw-type dislocations disappear at an early AlN growth stage. The dislocation density of the AlN films in its surface region is as low as approximately 1x10 10 cm -2 . The distribution of the dislocations is considered to be caused by a large twisted mosaicity and a very small tilted mosaicity.