Suppression of byproduct generation at 4H-SiC/SiO2 interface by the control of oxidation conditions characterized by infrared spectroscopy
Suppression of byproduct generation at 4H-SiC/SiO2 interface by the control of oxidation conditions characterized by infrared spectroscopy
复制标题
通过控制氧化条件抑制 4H-SiC/SiO2 界面副产物的生成（红外光谱表征）
DOI：
10.7567/apex.8.021401
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发表时间：
2015
影响因子：
2.3
通讯作者：
K. Kita
中科院分区：
文献类型：
--
作者：
H. Hirai;K. Kita
红外光谱检测到4H-SiC/SiO_2界面有一个氧化副产物，在2100-2150 cm−-1范围内有一个峰。峰强度与氧化条件的关系表明，氧化副产物的产生受氧化剂和氧化温度的共同影响。在干燥氧气中低温氧化会产生副产物，而使用H2O作为氧化剂和高温氧化是抑制副产物产生的有效方法。考虑到18O2同位素氧化的峰频移，包括C≡O键在内的含氧化合物可归因于副产物。
An oxidation-induced byproduct at the 4H-SiC/SiO2 interface was detected by infrared spectroscopy as a peak in the range of 2100–2150 cm−1. The oxidation condition dependence of the peak intensity revealed that the generation of the byproduct is significantly affected by both the oxidant and the oxidation temperature. Low-temperature oxidation in dry O2 generates the byproduct, whereas employing H2O as the oxidant and oxidation at high temperature are effective ways of suppressing the byproduct generation. Oxygenated compounds including C≡O bonds are attributable to the byproduct, considering the peak frequency shift observed for oxidation with the 18O2 isotope.