Simulation and design optimization of germanium-on-silicon single photon avalanche diodes
Simulation and design optimization of germanium-on-silicon single photon avalanche diodes
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DOI：
10.1117/12.2650154
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发表时间：
2023-03
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影响因子：
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通讯作者：
Charles Smith;J. Kirdoda;D. Dumas;C. Coughlan;C. McCarthy;Hannah Mowbray;M. Mirza;Fiona Fleming;Xin Yi;Lisa Saalbach;G. Buller;D. Paul;R. Millar
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文献类型：
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作者：
Charles Smith;J. Kirdoda;D. Dumas;C. Coughlan;C. McCarthy;Hannah Mowbray;M. Mirza;Fiona Fleming;Xin Yi;Lisa Saalbach;G. Buller;D. Paul;R. Millar
单光子雪崩二极管(SPAD)是一种半导体光电二极管探测器，能够探测单个光子，通常具有亚ns精度的定时。我们之前已经展示了可吸收到短波红外的新型伪平面硅上锗SPAD，与III-V SPAD相比，这种SPAD具有更低的成本和潜在的更容易的cmos集成。在这里，我们使用麦金太尔雪崩模型和陷阱辅助隧道产生模型的自定义求解器模拟了这些器件的暗计数率。使用实验数据进行了校准和拟合，结果突出了该技术可以优化的领域。
Single photon avalanche diodes (SPADs) are semiconductor photodiode detectors capable of detecting individual photons, typically with sub-ns precision timing. We have previously demonstrated novel pseudo-planar germanium-on-silicon SPADs with absorption into the short-wave infrared, which promise lower costs and potentially easier CMOS integration compared to III-V SPADs. Here we have simulated the dark count rate of these devices, using a custom solver for McIntyre’s avalanche model and a trap assisted tunnelling generation model. Calibration and fitting have been performed using experimental data and the results have highlighted areas in which the technology can be optimised.