High-speed detection at two micrometres with monolithic silicon photodiodes
High-speed detection at two micrometres with monolithic silicon photodiodes
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DOI：
10.1038/nphoton.2015.81
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发表时间：
2015-06-01
期刊：
影响因子：
35
通讯作者：
Knights, Andrew P.
中科院分区：
文献类型：
--
作者：
Ackert, Jason J.;Thomson, David J.;Knights, Andrew P.
随着通过光网络传输的数据量的持续急剧增长，人们普遍认为需要更复杂的光电子技术来预防“容量紧缩”(1)。一个有希望的解决方案是在2微米附近开辟新的光谱区域，并利用空芯光子带隙光纤(2，3)和最近可用的掺Tu光纤放大器(4)的长波长传输和放大能力。到目前为止，用于该窗口的光电探测器主要依赖于III-V材料(5)，或者，如果寻求与硅光子学集成的好处，则使用GeSn合金，到目前为止，这类材料的实用性有限(6-9)。在这里，我们描述了在这个波长范围内工作在20Gbit S(-1)的硅光电二极管。该探测器与标准硅工艺兼容，并直接与绝缘体上硅波导集成，这意味着该探测器在通信应用中的硅基中红外集成光学中具有广阔的应用前景。
With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a 'capacity crunch'(1). A promising solution is to open new spectral regions at wavelengths near 2 mu m and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres(2,3) and the recently available thulium-doped fibre amplifiers(4). To date, photodetector devices for this window have largely relied on III-V materials(5) or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility(6-9). Here, we describe a silicon photodiode operating at 20 Gbit s(-1) in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.