Raman scattering and high temperature ferromagnetism of Mn-doped ZnO nanoparticles
Raman scattering and high temperature ferromagnetism of Mn-doped ZnO nanoparticles
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DOI：
10.1063/1.2208564
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发表时间：
2006-06-19
影响因子：
4
通讯作者：
Liu, E. H.
中科院分区：
文献类型：
--
作者：
Wang, J. B.;Huang, G. J.;Liu, E. H.
利用拉曼散射研究了锰对ZnO晶格动力学的影响，锰是获得ZnO稀磁半导体的有效掺杂剂。发现Mn掺杂增加了晶格缺陷，并诱导出275和526 cm（-1）两个拉曼振动模。另一方面，在Zn_（1-x）Mn_xO（x）中观察到高温（T-C高于350 K）铁磁性
Raman scattering has been used to study the influence of manganese, an effective dopant to obtain ZnO diluted magnetic semiconductors, on the lattice dynamics of ZnO. It is found that Mn doping increases the lattice defects and induces two Raman vibration modes of 275 and 526 cm(-1). On the other hand, high temperature (T-C higher than 350 K) ferromagnetism is observed in Zn1-xMnxO (x