Enhancement-Mode $eta$ -Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
Enhancement-Mode $eta$ -Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
复制标题
具有 N 离子注入阻断器的增强型 $eta$ -Ga2O3 电流孔径垂直 MOSFET
DOI：
--
复制
发表时间：
2020
影响因子：
4.9
通讯作者：
M. Higashiwaki
中科院分区：
文献类型：
--
作者：
M. Wong;H. Murakami;Y. Kumagai;M. Higashiwaki
增强型（E-模式）垂直 <inline-formula> <tex-math notation="LaTeX">$ eta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> 具有电流孔径的金属氧化物半导体 (MOS) 场效应晶体管是在单晶上开发的 <inline-formula> <tex-math notation="LaTeX">$ eta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> (001) 衬底。将氮离子注入到通过卤化物气相外延生长的漂移层中，以形成用于垂直源漏隔离的电流阻挡层（CBL），同时注入硅离子以形成简并掺杂源极接触区和在0-V栅极偏压下完全耗尽的顶栅横向沟道。尽管非理想 MOS 接口将最大漏极电流密度限制为 <0.1 kA/cm<sup>2</sup>，但这些器件仍提供 <inline-formula> <tex-math notation="LaTeX">$2 imes {10}^{{7}}$ </tex-math></inline-formula> 的高输出电流开/关比。演示了在断态电压应力下无电流崩溃的脉冲操作。由于 CBL 泄漏，硬击穿过早发生，但预计可通过优化的氮注入工艺得到改善。基于可制造的全离子注入工艺的E型垂直Ga<sub>2</sub>O<sub>3</sub>晶体管的实现代表了Ga<sub>2</sub>O<sub>3</sub>电力电子器件实际应用的重要一步。
Enhancement-mode (E-mode) vertical <inline-formula> <tex-math notation="LaTeX">$eta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> metal–oxide–semiconductor (MOS) field-effect transistors featuring a current aperture were developed on a single-crystal <inline-formula> <tex-math notation="LaTeX">$eta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> (001) substrate. Nitrogen ions were implanted into a drift layer grown by halide vapor phase epitaxy to form current blocking layers (CBLs) for vertical source–drain isolation, while Si ions were implanted to form degenerately doped source contact regions and a top-gated lateral channel that was fully depleted at 0-V gate bias. The devices delivered a high output current on/off ratio of <inline-formula> <tex-math notation="LaTeX">$2 imes {10}^{{7}}$ </tex-math></inline-formula> despite a nonideal MOS interface that limited the maximum drain current density to <0.1 kA/cm<sup>2</sup>. Pulsed operation without current collapse under off-state voltage stress was demonstrated. Hard breakdown occurred prematurely owing to leakage through the CBLs, but is expected to improve with an optimized nitrogen implantation process. The realization of E-mode vertical Ga<sub>2</sub>O<sub>3</sub> transistors based on a manufacturable all-ion-implanted process represents an important step toward practical applications of Ga<sub>2</sub>O<sub>3</sub> power electronics.