Vertical 3D NAND Flash Memory Technology
Vertical 3D NAND Flash Memory Technology
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垂直3D NAND闪存技术
DOI：
10.1149/1.3633282
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
H. Aochi
中科院分区：
文献类型：
--
作者：
A. Nitayama;H. Aochi
我们已经开发了位成本可扩展（BiCS）闪存技术作为未来超高密度存储设备的三维存储器，通过穿孔和插入工艺垂直堆叠存储器阵列，极大地降低了芯片成本。我们将其发展为管形BiCS闪存，引入U形NAND串结构，以提高操作窗口、速度和可靠性。采用60 nm P BiCS Flash工艺，成功制作了16层32 G位测试芯片，并实现了MLC功能。P-BiCS是最有希望的三维超高密度数据存储器。
We've developed Bit Cost Scalable (BiCS) flash technology as a three-dimensional memory for the future ultra high density storage devices, which extremely reduces the chip costs by vertically stacking memory arrays with punch and plug process. We've advanced it into Pipe-shaped BiCS flash memory introducing U-shaped NAND string structure, to improve operation window, speed and reliability. 32 G bit test chips with 16 stacked layers by 60nm P-BiCS flash process have been fabricated, and the functionality of Multi-Level-Cell (MLC) operation has been successfully demonstrated. P-BiCS is the most promising candidate of three-dimensional ultra high density data storage memories.